PART |
Description |
Maker |
K4S281632M-TL80 K4S281632M K4S281632M-L10 K4S28163 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S280432D-TC/L1H K4S280432D-TC/L1L K4S280432D-TC/ |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4S280432C-TC_L1H K4S280432C K4S280432C-TC_L1L K4S |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
V54C3128164VBGA V54C3128804VBGA V54C3128 V54C31284 |
16Mbit x 8 SDRAM, 3.3V, LVTTL, 6ns 128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
V54C3128164VS V54C3128164VT |
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
|
Mosel Vitelic, Corp
|
V55C2128164VT V55C2128164VB |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|
V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|
K4S280432M-TC_L80 K4S280432M K4S280432M-TC_L10 K4S |
MC 7P MR 16/1 PVC GOLD RoHS Compliant: Yes 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4M28163PH |
2M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
K4M641633K |
1M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
H5MS1222EFP-L3E H5MS1222EFP-L3M H5MS1222EFP-J3E H5 |
128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O 4M X 32 DDR DRAM, PBGA90
|
HYNIX SEMICONDUCTOR INC
|